An Over 29.5-W, 7–13-GHz Wideband GaN Power Amplifier With High Harmonic Suppression

This letter presents a high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-
$\mu $
m gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. An elliptic filter output matching network (MN) and a matching circuit design method based on the combination of port impedance model (PIM) and load pull are proposed, which can achieve high harmonics suppression across 7–13 GHz using a reactive matching (RM) technique. The three-stage GaN PA achieves a minimum output power of 44.7 dBm and a peak output power of 46.3 dBm at 7.5 GHz. The power-added efficiency (PAE) is more than 34.4%, with a peak PAE of 39.0% at 9.5 GHz. The second harmonic suppression (HS2) reaches more than 22.5 dBc. The PA chip occupies an area of
$4.8\times 3.0$
mm2.