Design and Optimization of the GaN HEMT Class-J Power Amplifier for 2.4GHz Applications

This paper is focused on the analysis and design of a “Class-J P A” based on optimized GaN High electron mobility transistor device (which have been modeled using the Silvaco Atlas simulator) to achieve the desired performance measurements, including low power dissipation, high efficiency without affecting linearity, and improved band width. Based on the final simulation results, the calculations show that the suggested “Class-J P A” achieves a P AE of approximately equivalent to 77.7%, a 13 dB large-signal gain and an output power of about 41 dBm at 2.4 GHz. With a bandwidth of roughly 1.05GHz (i.e., 2.05GHz-3.l GHz), Compared to earlier P A modes, the proposed Class-J P A is better and more suitable for 5G application for 6-sub GHz band (i.e. wireless communication networks). Also, the designed “Class-J P A” can be used in IEEE802.ll standers with a broad coverage area because of its excellent linearity, which satisfy with this stander requirements (i.e. 802.llax and 802.llbe).