Design and Analysis of Top and Bottom Contact Organic Thin Film Transistors

This work explores the electrical performance and behavior of various top and bottom contact configurations in organic thin film transistors (OTFT). Novel structures are introduced, showing superior performance in key parameters in terms of drive current (I
DS
), I
ON/OFF
ratio, mobility (µ), threshold voltage (V
TH
), and contact resistance (R
C
). The investigation involves an analysis of asymmetric OTFT structures, including bottom gate top contact (BGTC), bottom gate bottom contact (BGBC), top gate bottom contact (TGBC), and top gate top contact (TGTC) configurations, utilizing the ATLAS 2-D numerical simulator. Among these asymmetric structures, BGTC contact emerges as a particularly promising structure, exhibiting the highest mobility and a low subthreshold slope. The findings from this research offer valuable insights into optimizing OTFT configurations for enhanced performance, which paves the way for real-time applications in flexible electronics, organic displays, and other emerging technologies.