Contact Material and Interface State Effects on AlGaN/GaN HEMT Characteristic and Performance

Aluminum Gallium Nitride/Gallium Nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) have gained significant attention for their superior electrical properties, making them promising candidates for high-frequency and high-power applications. The performance of AlGaN/GaN HEMTs is significantly influenced by the properties of the contact materials and interface states. This research article presents a comprehensive review and analysis of the effect of contact material choices and interface states on the performance of AlGaN/GaN HEMTs. Various theoretical models, and simulation studies are discussed to elucidate the underlying mechanisms governing the electrical characteristics of AlGaN/GaN HEMTs. The findings underscore the critical role of contact materials and interface engineering in optimizing device performance and reliability for next-generation electronics.