Enhancing Performance and Versatility of DG-JL-TFET with A1N Piezoelectric Materials for High-Power Applications

The purpose of this study is to investigate the incorporation of aluminium nitride (AIN) piezoelectric materials into double-gate junctionless tunnel field-effect transistors (DG-JL-TFETs) to improve the performance of these transistors and increase their versatility for use in applications that require high power. The use of A1N materials results in the introduction of one-of-a-kind piezoelectric capabilities, which can be utilized to optimize the features of the device, including charge carrier mobility, threshold voltage, and subthreshold swing for example. By employing the Synopsis TCAD simulator software, we demonstrate the substantial enhancements achieved in various performance parameters of the device, including breakdown voltage, power efficiency, and switching speed. These improvements were achieved through detailed calculations and experimental validation studies. The DG-JL-TFET achieves the
$I_{on}/I_{off}$
ratio of 6.1 ×10
¹¹
and
$V_{T}$
of 0.5 V. When the leakage current can be reduced the On-state current is enhanced and improves the device performance and it can be reduces the Short Channel Effects. When combined with AIN piezoelectric materials, they create a synergistic combination that opens up new paths for the design and implementation of high-power electronic systems that have improved reliability and functionality. The Potential applications of A1N-enhanced DG-JL-TFETs in emerging fields such as power electronics, RF communication, and sensor technology.