Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

Monolithically integrated GaN devices have gained traction due to their lowered cost and suitability to produce large-scale optoelectronic and digital communication systems. To address the unavailability of realistic compact modeling of these devices and their circuitry, a framework for temperature-dependent finite element multiphysics simulation of high-density micro-light-emitting diodes (
$\mu $
LEDs) integrated with commercial high electron mobility transistors (HEMTs) has been developed. To incorporate the behavioral model extraction into Cadence, the multiphysics-based behavioral model is extracted in Verilog-A. Each proposed quantum well
$\mu $
LED is individually modeled under varying temperature conditions, allowing for comprehensive analysis at both the behavioral and circuit-level regimes. This analysis is performed in Cadence Virtuoso design environment, comprising a driving HEMT, and a CMOS ASIC is subsequently proposed. The peak internal quantum efficiency (IQE) of each
$\mu $
LED exhibits a variation of 0.046%/oC with wide operational current densities of 0.01–450 A cm
$^{-{2}}$
. This leads to the development of a definitive tool kit for the practical modeling of GaN-based devices, which can be further integrated with CMOS devices to facilitate optoelectronic circuit design.