A DTCO Framework for 3D NAND Flash Readout

To continue increasing the storage density of 3D NAND flash memories, new technology options need to be evaluated early on. This work presents a unique predictive parametric framework for Multi-Level Cell 3D NAND Flash read operation at the array level. This framework is used to explore the read sensitivity to multiple parameters and technology options. We identify the trade-offs between number of layers, read-current and read time to be the most determinant factors to ensure the array readability while enabling stacks of more than 300 layers and maximizing the memory density.