LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash

3D NAND flash with charge trap (CT) technology has been developed by stacking multiple layers vertically to boost storage capacity while ensuring reliability and scalability. One of its critical characteristics is the large endurance variation among and inside blocks and layers. With this feature, traditional bad block management (BBM), which determines block lifetime by the page with worst endurance, results in underutilization of solid state drive (SSD) usage. In this paper, a layer variation aware and fault-tolerant bad block management, named LaVA, is proposed to prolong the lifetime of 3D NAND flash storage. The relevant layer, instead of the entire flash block, is discarded at a finer granularity when a page failure is encountered. Experimental results based on real-world workloads show that LaVA can significantly extend the endurance of 3D CT NAND flash (30.6%-62.2%) with a small performance degradation (less than 10% increase of tail I/Oresponse time), compared to the conventional technique.