Effect of Passivation on BEOL-Compatible Oxide Semiconductor Transistor

This study has demonstrated the scalability of BEOL- compatible copper oxide-based TFT. At a temperature of 300 °C, pure phase
$\mathrm{C}{\mathrm{u}_2}\mathrm{O}$
thin film is synthesized via applying oxygen annealing on sputtered metallic Cu. Additionally,
$\mathrm{A}1_{2}\mathrm{O}_{3}$
passivation by atomic layer deposition is observed to suppress off-state leakage by 2 orders of magnitudes. Moreover, the scalability is demonstrated by the successful fabrication of a 6nm thin film
$\text{Cu}_2 \mathrm{O}$
TFT. The role of passivation is examined through PBS test.