Si Multi-Bridge Channel CMOS Inverter with Five Stacked Layers Fabricated from Epitaxial Si0.8Ge0.2/Si Multilayers

This study successfully fabricates a CMOS device with an advanced 5-layer Si multi-bridge channel (MBC) through a highly selective dry etching process explicitly designed for GAA-FET manufacturing. The investigation employs highly selective etching processes, Atomic Layer Etching (ALE), to explore the impact of p-/n-channel implantation with varying channel widths in creating highly stacked multi-bridge channels for advancing CMOS GAAFET technology.