Transport Study of PEALD IGZO TFT at Cryogenic Temperatures down to 6 K

In this work, we study the transport behavior of plasma-enhanced atomic-layer deposited (PEALD) IGZO TFT at cryogenic temperatures down to 6 K. The PEALD deposited IGZO TFT features decent field-effect mobility
$(\mu_{FE})$
of 37.04 cm
²
/V.s, excellent subthreshold swing (SS) of 68.7 mV/dec and positive threshold voltage
$(V_{TH})$
of 0.48 V. The electrical properties were measured over temperature range from 6 K to 300 K. As temperature reduces to 6K,
$\mu_{FE}$
‘ drops to 22.3 cm
²
/V.S, while SS improves to below 60 mV/dec, with a positive
$V_{TH}$
shift, beneficial for ultra-low power circuitry.