Advanced Metrology of Thick Silicon Nitride Films at 300 mm Scale for Next Generation High-Q Photonic Devices

The proposed paper will present various inline and offline advanced metrology data of thick SiN films (~>500 nm) prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. We present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.