High-speed Electro-absorption Modulator Assisted by Iron Doping for Micro-Transfer-Printing Integration

A high-speed lumped-element electro-absorption modulator designed for micro-transfer-printing onto silicon has been tested. The modulators use an iron doped layer to reduce the parasitic capacitance of the devices after transfer-printing, which is beneficial for achieving high bandwidth for heterogeneous integration applications with silicon photonics.