Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer

Direct bandgap Ge
0.86
Sn
0.14
photodiodes were fabricated on Si substrates using layer transfer. The layer transfer did not degrade the noise of the initial photodiode stacks, while the underlying metallic mirrors improved the responsivity at 300 K by a factor of 2.9 at 2.5 µm.