Conventional CMOS technology based RadFET dosimeter for Ionizing Radiation Detection for High Energy Applications

In CMOS integrated circuits (ICs), major failures can be caused by the electrical breakdown in the region of oxides and interfaces when the CMOS ICs are subjected conditions like space environment or high energy laboratory settings. When it comes to addressing radiation impacts and preventing circuit failures, the utilization of Triple Modular Redundancy (TMR) and the radiation harden shielding at both the circuit level and/or system levels is beneficial. On the other hand, this strategy may incur additional costs and bring additional strain on the system. RADFETs are widely employed dosimeters that have found considerable application in space and particle accelerator environments. This work proposes an optimized radiation sensor for detecting and measuring radiation effects. The primary goal of this proposed work is to develop a radiation sensor capable of accurately detecting and measuring radiation doses with precision. The mathematical and modeling findings that are used to determine the oxide thickness of the sensor. Other parameters are adopted from SCL 180 nm CMOS technology. The simulation of a RadFET dosimeter is accomplished through the use of the Cogenda TCAD simulator. The substrate material used is Silicon with a Na doping concentration of 1e16 cm
^-3
and 300 nm is an oxide thickness of the RaDFET dosimeter. The simulated threshold voltage is -0.9 V, whereas the calculated threshold voltage is -0.96 V. For testing purposes, the sensor underwent radiation dose exposure from 10 krad to 200 krad TID dose. Threshold voltage shift is adopted as a sensitivity parameter. The sensor exhibits a sensitivity of 89 μV/rad within the range of 0 to 100 krad and 10 μV/rad for 100 krad to 200 krad range