3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs

For the first time, we propose the design and fabrication of 3D-stacked 2T0C-DRAM cells with Al2O3/TiO2-based 2DEG FETs as the building blocks. The robust carrier transport nature in the 2DEG channel at the Al2O3/TiO2 interface is beneficial for steep FET switching. The design and process of the gate stack in Al2O3/TiO2 FET are optimized, and the off-state leakage is effectively suppressed (
$\sim {2}\times {10}^{-{17}}$
A/
$\mu $
m) by alleviating the over-negative V
$_{\textit {th}}$
issue with dual-gate manipulation. This provides fundamental basis of the excellent retention over ~400 s in 2T0C-DRAM cells. The 3D stacking process is further developed with two layers of DRAM cells showing retention time of ~30 s and ~4 s, respectively. Our results have demonstrated great potential for future low-power and high-density monolithic 3D DRAM applications.