A 2.98 dB NF, 2.52 mW Low Noise Amplifier for a Brain Neuromodulation Implant

This study introduces a low noise amplifier (LNA) designed specifically for lower ultrawideband (UWB) applications. The presented LNA is based on a current-reuse common source (CS) architecture so as to achieve energy efficiency without sacrificing the noise performance. With 1.2V supply voltage, the proposed LNA consumes 2.52 mW power and achieves a 16.81 dB peak gain at 4.2 GHz frequency, with 1.28 GHz of 3-dB bandwidth. The average noise figure (NF) achieved is 2.98 dB across the 3-dB bandwidth. The design is realized using a standard 0.18 µm CMOS technology. The characteristic of the suggested amplifier makes it a proper candidate to be applied for implantable medical devices.