Nonlinear Distortion and its Analysis on Radio Frequency Thin Film Bulk Acoustic Devices

In this work, we succeeded in extracting the dominant parameters for 2nd order nonlinear analysis proposed by K. Hashimoto and verified that it was applicable in wide frequency range and effective for FBAR device design. Also it was confirmed that the proposed simulations were good agreement with measurement results for various type resonators and FBAR filters. Furthermore, we studied the impact of SiO2/SiOF on the 2nd harmonic (H2) generation in temperature compensated (TC) film bulk acoustic resonators (FBARs). It was shown that not only AlN but also SiOF contributed the generation of the H2 response, and H2 became very small at an appropriate mass loading film thickness. Finally, H2 response of TC-FBAR operating at 5.9 GHz was compared with the simulation. The simulation agreed well with the experiment. It was also demonstrated that insertion of the TC-layer was effective to suppress the H2 generation.