Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>10¹² Cycles)

The impacts of Si doping in Hf0.7Zr0.3O2 films are studied in this work. Compared with the standard Hf0.5Zr0.5O2 (HZO) films, the samples with Si-doped Hf0.7Zr0.3O2 film show higher relative permittivities and lower leakages. More importantly, a high breakdown electric field (
${E} _{\text {BD}}~4.3$
MV/cm) and a low coercive field (
${E} _{\text {c}}~0.64$
MV/cm) have been achieved experimentally. In this way,
${E} _{\text {c}}$
/
${E} _{\text {BD}}$
could be reduced from 32% to 15%, and this benefits the endurance property effectively. Specifically, compared with the HZO samples, better endurance and weaker fatigue (>1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities.