A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

In this study, we present an embedded resistive random-access memory (RRAM) IP with superior reliability, which has been fabricated using a commercial 40nm High-Voltage (HV) CMOS technology. We designed short-loop test structures to successfully develop high-performance RRAM devices on this platform. The challenges associated with the drive circuit design using HV devices were addressed by introducing complementary output switch (COS) and power decoding (PWD). Additionally, a write driver-assisted current limiting(WDACL) strategy was developed for Forming, which effectively narrowed the post-Forming current distribution and reduce the device-to-device variation. Finally, chip-level test results showed that the RRAM IP can achieve a high endurance of 10K cycles and good retention of 37.5hrs at 175°C (equivalent to 10yrs at 85°C). Our RRAM IP is the first one on 40nm HV platform that reports both endurance and retention, which meets the requirement for applications like Display Driver IC (DDIC).