A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO
2
(HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec, large memory window (MW) of 2.5V, 2 bits/cell, and reliable 10-years retention are reported. Furthermore, new Gate-All-Around with Back-Gate (GAAB) structure and operation scheme are proposed to increase MW by improving the channel potential controllability and enhance resistance against disturb for Multi-Level Cell(MLC) operation.