High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications

In this work, we demonstrate an efficient and comprehensive model for designing non-volatile and volatile ferroelectric tunnel junctions (FTJs), based on Metal-Ferroelectric-Insulator-Metal (MFIM) structure. 1) A high-efficient dynamic module is developed to simulate polarization retention loss and capture the multi-domain reversal by involving an inhomogeneous field distribution. 2) The potential profile calculation involves the contributions of screening charge and image force, which play significant roles in the depolarization field, ON-state current density (J
ON
), and tunneling electroresistance (TER) ratio. 3) The design spaces of material properties to optimize the non-volatile/volatile performance are systematically investigated, enriching the capability of MFIM FTJs.