A Novel Approach to Increase the Power Utilization of Nano-Pillar Based CdS/CdTe Solar Cell by Integration of CdS Trench: A Way Forward

An innovative strategy has been employed to boost the efficiency of Nanopillar-based n-CdS/p-CdTe solar cells by integrating a CdS trench (CdST) within the CdTe layer. Through device analysis using TCAD software Silvaco, the CdST demonstrates much desired squared current-voltage characteristics. Moreover, the performance metrics of the device have been fine-tuned by optimizing the geometrical parameters of the CdS trench, including its width, depth, and placement. Compared to the conventional Nanopillar Based n-CdS/p-CdTe structure without a CdS trench (CNP), the optimized geometry incorporating a CdS trench has demonstrated an improvement of 5% in efficiency (EFF) and 13% in fill factor (FF).