High-Performance 3D-Graphene/GaAs Photodetectors for Applications in Logic Devices and Imaging Sensing

Conventional gallium arsenide (GaAs) photodetectors (PDs) encounter challenges in achieving high performance and sufficient photoelectric conversion efficiency with the near-infrared (NIR) band. This work presents a novel strategy aimed at enhancing the light absorption capabilities of GaAs PDs within the NIR band through the integration of 3D-graphene. The proposed heterojunction architecture is tailored to optimize the interaction of light fields and electron transport between 3D-graphene and GaAs. This optimization significantly enhances light absorption efficiency and overall photoelectric conversion. Experimental findings illustrate the successful expansion of the response band of GaAs PDs to 980 nm, surpassing the conventional absorption limit of 874 nm. Notably, the heterojunction PD exhibits a high specific detectivity of
$1\times 10^{{{10}}}$
Jones and a high response rate of 3.1 A/W under laser excitation at 980 nm. The PD proves its applicability in logic circuits and image sensing, showcasing its potential for practical applications and its contribution to technological innovation in the field of NIR optoelectronics.