An Investigation of Cu/Ni/Ga Interfacial Reaction with Different Ni/Ga Ratio

In this article, we utilized electroplating method forming Cu/Ni/Ga structure. Interfacial reaction was investigated with different ratio of Ni: Ga 7:3 and 1:20. The result showed that Ga reacted with the substrates immediately as plated forming NiGas and CuGa2 compound respectively in different ratio of Ni: Ga. IMCs transformed into Ni
2
Ga
3
and Cu
31.3
Ga
16.3
respectively after 300°C heat treatment. This research explored a new optimizing idea in developing Ga TLP bonding technology.