Thermal Transisent Evaluation of MOSFETs Heating Current Applied from Source to Drain

Thermal transient methodology is proposed for SiC-based MOSFETs used in synchronous rectification inverters which decreases the working hours significantly. Measurement was carried out following the JESD51-14 standard by applying heating current from source to drain. The structure function of proposed method fitted with conventional method proving that there is no different in thermal transient measurement by its heating directions.