Formation of SiO2 Bonding Interface using Perhydropolysilazane at Room Temperature

This paper presents a new approach for room temperature wafer bonding using polysilazane as a precursor for the SiO
2
bonding interface. Wafer bonding is a key technique for electronics packaging, but conventional methods require an undesirable annealing step due to their reliance on the formation of the SiO
2
bonding interface through oxidation or condensation polymerization facilitated by water adsorption. In this study, we propose and demonstrate room temperature wafer bonding achieved through the conversion of polysilazane into SiO
2
at the bonding interface. As a result, the bond strength at room temperature exceeds 5.5 J/m
²
without significant voids. This establishes a new method for room temperature wafer bonding.