A Four-Port Noise De-Embedding Methodology for On-Wafer Microwave Device Based on Electromagnetic Simulation

This letter presents a four-port noise de-embedding procedure for on-wafer microwave measurements based on electromagnetic (EM) simulation. The proposed de-embedding procedure uses EM simulation dummy structures and only one device measurement to eliminate the parasitic effects from the probe pads and metal interconnects of a device under test (DUT). This method can generate intrinsic noise characteristics parameters to efficiently and precisely remove the redundant parasitic of the DUTs with various device sizes. The accuracy and feasibility of the noise de-embedding method are verified by comparing the de-embedding results of EM simulation, on-wafer testing, and circuit-model-calculated. Finally, we evaluate the accuracy of the de-embedding approach with the traditional approach and experimental data obtained on InP HEMT.