Performance Analysis of Thickness Dependency of Control Coefficients of CNTFET

For scaling Field-Effect Transistors (FET) into nanometers, carbon nanotube (CNT) is a possible contender. CNTFETs' performance is highly impacted by the length of the CNT and the amount of thickness of their gate insulator. This study investigates the behavior of carbon nanotube field effect transistors, also known as CNTFETs, under ballistic conditions by analyzing the effect of varying gate and drain control coefficients on the device's thickness. The influence of the gate as well as the drain control coefficients on the functioning of CNTFETs was carefully explored, and the output of the device has been evaluated using a number of parameters. This research has been conducted at varying thicknesses. As the gate control coefficient grows, the DIBL effect decreases, while the DIBL impact increases when the drain control coefficient increases. In addition, the sub-threshold swing becomes less as the gate control coefficient gets higher and gets bigger as the drain control coefficient gets higher. In addition, an increase in the gate control coefficient and the drain control coefficient increases the transconductance. The outcomes of a thorough investigation of the DIBL effect, Sub-threshold swing, and transconductance of a ballistic CNTFET over a variety of thickness ranges are described in this study. To ensure optimum performance, the ideal values for both control coefficients must be established in this way.