FDTD Investigation of Optical Coupling Between Si3N4 Based Waveguide and III-V Binary Semiconductor Compound Waveguide With Amorphous Si as an Optical Bridge

We report on the investigation of optical coupling performance between Si
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waveguide via an amorphous Si and GeSi, GaAs and InAs waveguide through FDTD calculations. In this vertical coupling configuration, the waveguide material is potentially employed to optimize the maximization of the confinement of optical power. In this structure the waveguide has been placed over a Si tapper on a Si substrate. Si
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, GeSi, InAs and GaAs shows significant electro optic effect because of their electro absorptive nature which is crucial for optical modulation. To examine the coupling efficiency, we analyzed with respect to the variations in optical wavelengths, which are 1310 nm (O-band), 1410 nm (E-band), 1495 nm (S-band), 1550 nm (C-band), and 1595 nm (L-band) and critical parameter of the coupling structure. The influence of the modulator's structural parameters in respect of different semiconductor material is obtained by comparing the transmission, power, efficiency, EF and MF. The binary III-V semiconductor material has been selected based on it's optical confinement and light handling capabilities. To investigate the influence of material change in transmission, power, efficiency, electric field and magnetic field 3D FDTD simulations have been conducted over the wavelength ranges and the 2D output has been compared in each category. It can be employed to develop an efficient waveguide for optical modulation subjective to the requirements of photonic integrated circuit. Based on this design the study of higher efficient material can develop a practical and more functional device for optical interconnect. These can be further used to split and unify light for a high performing, complex photonic integrated circuit. This experimental demonstration can also enable the use of waveguide for advanced photonic integrated circuit.