Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate

This work focuses on the evaluation of power dissipation on Diamond substrate materials for high electron mobility transistors (HEMTs) based on gallium nitride, with particular attention to temperature effects. The estimation of the channel temperature is accomplished through the analysis of measurement data, which is further extended to consider substrate thermal resistance and conductivity. The research comprises a comparative examination of power dissipation using three different methods for gallium nitride HEMTs on a Diamond substrate. The thermal resistance
$(\mathbf{R}_{\mathbf{th}})$
of the device is estimated to be
$14.6\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-1}$
and and 19.3K.mm.
$\mathbf{W}$

^-1
at
$\mathbf{T}_{\mathbf{a}}$
of
$298\mathbf{K}$
and 16.1 K.mm.
$\mathbf{W}^{-1},20.8\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-}$

¹
and
$19.9\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-1}$
at
$\mathbf{T}_{\mathbf{a}}$
of
$358\mathrm{K}$
using the three respective methods using measured data. The thermal resistance exhibits an increase with temperature, in accordance with the findings in the current literature.