A Novel Approach for Doping Two-Dimensional MOS2 Materials: ZNO Polar Interfacial Charge Transfer Method

The performance of monolayer Mos2 devices is restricted by low carrier density and contact resistivity. It is crucial to discover a new doping technology to overcome these limitations. In this study, we have devised a novel approach for doping Mos2. By utilizing the ZnO polarity of the different elements interface, Mos2 can be doped with n/p doping. We also constructed a dual-ended device and found that this method indeed increased the intrinsic current at 4.5nm by 10
⁶
times.