Effect of Low Damage Strip Process on Sige Surface State

Effect of low damage strip process on SiGe surface state under ICP and MARS mode is studied in this paper. FG-based current density in MARS mode is around 10 times lower than that of ICP mode. Ge rich interface is found between Si-O and SiGe layers after treatment process. Valence state can be tailored by various gas composition and plasma activation mode in strip process. Oxidation thickness and valence state are different for the surface of SiGe sample with various treatment conditions, including ICP and MARS mode.