Two-Dimensional MOS2 Based Memristors for Artificial Neural Network

Neuromorphic computing has recently gained significant research interest due to its potential for efficient computing enabled by dense integration of memristive devices. However, few studies have demonstrated neurons and synapses utilizing the same two-dimensional (2D) materials and fabrication process. In this work, we investigate molybdenum disulfide (MoS
2
) treated with thermal oxidation as both volatile memristors (VMs) and non-volatile memristors (NVMs) for neuromorphic applications. For the VM, the devices with the structure of Ag/Ti/MoS
2-x
O
x
/Pt devices exhibit low operation voltages, low-variability in threshold voltage. The structure of Pt/Ti/MoS
2-x
O
x
/Pt demonstrates gradual set and reset behavior mimicking synaptic plasticity.