Experimental Investigation on the Back-Gate Modulation of Extra-Thin Body Pmosfets

The back-gate modulation of body silicon-on-insulator (SOI) pMOSFETs with different channel thicknesses is systematically investigated by experiments and simulations. It is found that the carrier density and distribution would be hardly affected by the back-gate voltage for the 2-nm-thick extra-thin body (ETB) SOI pMOSFET, which is due to the strong surface roughness scattering simultaneously from the front and back gate interface. In this case, both front and back gate stacks with high-quality interfaces are crucial for the carrier transport properties in the ETB SOI pMOSFET.