Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

As a candidate device for a 3nm node, due to the presence of dielectric wall in the device, Forksheet Field Effect Transistors (FSFETs) have more severe self-heating and thermal crosstalk than ordinary Complementary FET (CFET). The impacts of related geometric shape and nanosheet size of dielectric walls are presented, providing guidance for self-heating effects (SHE) in device design. A thermal network model for Forksheet devices is proposed to quickly evaluate temperature changes under AC conditions. The results indicate that high attention should be paid to the self-heating of Forksheet devices.