Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer

In this paper, the effect of the addition of three additives (A1, A2, and A3) to the polishing slurry on the surface of single crystal silicon during chemical mechanical polishing (CMP) is compared. It is found that A3 has better hydrophilicity by atomic force microscopy (AFM) and contact angle experiments, and its mechanism was analyzed.