Ion Beam Shaping as a Solution for Ultra-High Precision Planarization Process

In this paper, we propose an ultra-high precision planarization process based on ion beam shaping (IBS) to meet the stricter requirements of current advanced process technology node miniaturization and chip 3D development process. Under this high stability process, nanoscale or angstrom level thickness and uniformity control across whole wafer can be achieved. We have recently demonstrated atomic level ultra precision modification capability via ion beam shaping (IBS) technology in multiple scenarios. Some examples include: surface roughness modification, CMP-like polishing, etch back process and loading improvement. Which ultimately achieving 3σ < 15Å within 300mm wafers, meeting the strict intra wafer uniformity goals for Fin-FET or even GAA technology.