Sample Preparation Method for In-Situ Tem Analysis in Integrated Circuits

In-situ TEM techniques assists process tuning and semiconductor device designing behaviors of materials and devices in response to changing temperature and electrical parameters. However, sample preparation of in-situ TEM is full of challenge. In this work, the selection of deposition material for In-situ TEM sample is demonstrated. Method of In-situ TEM sample preparation with DENS Solution provided 52°/33° stage, is elaborated in terms of its operating procedure, advantages and shortcomings. Finally, 4 in-situ biasing TEM testing configuration, thin film resistance measurement, Cu line electrical migration performance testing, high-resistance material electrical migration performance analysis and gate oxide properties analysis, are briefly discussed respectively.