Comparison of Simulation and Test Results of Multi-Type Ring Oscillators on Advanced Process Nodes

In this paper, we present the simulation and test result of various ring oscillators(ROs) based on state-of-the-art process node(FinFET technology). We designed five basic structures, based on which 90 kinds of ROs with different dirving strengths and devices types were generated. Under the differrnt conditions of voltage, we compared the EVB&ATE test data and SPICE simulation data of these ROs, and analyzed the impact of various factors on mismatch, which digitally confirms the feasibility of using path delay(PD) sensor like RO to monitor process variation and continuously focuses on yield improvement. Meanwhile, speed performance of ROs composed of gate-all-around(GAA)FETs are also simulated using TCAD intends to investgate the influences of process parameters, as nanosheets .