Ultra-Short Channel Polymer Transistors

Shortening the channel length is of significant importance for studying the charge carrier transport in polymer semiconductors. Due to the poor compatibility, polymer semiconductor thin films may be damaged during the photolithography process, affecting device performance. Consequently, reducing the channel length of polymer transistors presents a formidable challenge. In this work, we utilized an aluminum (Al) self-oxidation approach to fabricate polymer transistors with a channel length of approximately 10 nm, obviating the requirement for photolithography processes. Furthermore, a quantitative analysis of the device was performed, revealing an ultrashort-channel transistor with a negligible Schottky barrier. This work provides a convenient platform for studying polymer transport.