A New Method for Improving 8V ESD Performance

In recent years, with the rapid development of High Voltage Driver IC performance, the demand for ESD (Electro-Static Discharge) protection devices has increased. Gate-Grounded NMOS devices (GGNMOS, Gate-grounded NMOS) are commonly used as ESD protection devices. In this paper, IO 8V device is used as the protected device, aiming to improve the performance of GGNMOS by optimizing the process and structure. Experiments show that Holding Voltage and It2 increase with the increase of Channel length, and the increase of Holding Voltage is related to the length of the base area of npn. The increase of the base area will lead to the change of parasitic triode gain and further affect the Holding Voltage;