Deep Ridge InGaAlAs/InP MQW Transistor Lasers

We propose and study numerically a new deep ridge InGaAlAs/InP multi-quantum well (MQW) transistor lasers (TL), in which an n-doped InAlAs layer is inserted below the MQW layer in the device. High current gain can be obtained at the same time of laser operation, in contrast to the notable gain decreasing after lasing threshold in previous TLs. Because of the n-InAlAs layer, a normal graded index separate confinement heterostructure (GRIN-SCH) which helps to enhance the device modulation performance can be adopted. Thus, high quality electrical drivers can be expected to be integrated with high speed lasers with this InGaAlAs/InP TL structure.