Enhanced Lateral Photovoltaic Effect Observed in the Structure of Ag/MoS₂ Quantum Dots/n-Type Silicon

Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been widely utilized in various applications and how to improve the LPE sensitivity has attracted extensive research interest. Recently, MoS2 quantum dots (QDs) exhibit distinctive behavior compared with that in bulk solids, such as strong light absorption and photosensitivity. In this letter, a type of enhancement MoS2 QDs-induced LPE is observed in the nanostructure of Ag/MoS2 QDs/Si. The sensitivity can reach 194.04mV/mm under irradiation of 980nm laser, much higher than 8.39mV/mm in the control sample of Ag/Si. The separation and diffusion of photogenerated carriers at the interface are the key for enhancement. This structure exhibits great application potential in the field of near-infrared short wave PSDs and the research provides an effective method for the optimization of photoelectric devices.