Improvement of Polarization Retention at Low and High Temperatures for Hf₀.₅Zr₀.₅O₂ Thin-Film Capacitors

Generally the remanent polarization of pristine Hf0.5Zr0.5O2 thin films increases after the wakeup performance at room temperature. However, the improved polarization has poor retention at other temperatures. Here we studied its temperature dependence of polarization retention after the wakeup at 450 K without invoking of dielectric breakdown. This high-temperature treatment can symmetrize polarization-voltage hysteresis loops with the remanent polarization that is stable against retention time between 220 and 450 K. Otherwise, the remanent polarization decays more than 60% at high and low temperatures. This finding provides a robust solution to improve the polarization retention of Hf0.5Zr0.5O2 thin films to meet the standard requirement of working temperatures of non-volatile memories.