Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

We reveal a comprehensive physical insight into the high-field electrical breakdown in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. The electrical and electro-optic properties of 2D TMD FETs are extensively analyzed in the non-destructive breakdown regime. Careful investigations reveal that hot carrier Electroluminescence (EL) observed in the devices operated at the verge of breakdown can have two distinct origins: (i) EL by recombination of majority carriers in the TMDs with the minority carriers injected from electrodes at high bias (ii) Impact ionization EL at the electric field hot-spots. Finally, a unique dynamic trapping/de-trapping process-induced channel field modulation with increasing bias was also observed.