Electromigration Test Chip Experiments from Realistic Power Grid Structures: Failure Trend Comparison and Statistical Analysis

This work presents electromigration (EM) silicon data from realistic power grid device-under-tests (DUT). Power grids featuring logic gate equivalent quasi-load cells were generated by an automatic place-and-route tool to compare the EM failure location and lifetime behaviors. IR drop shifts and voiding location trends inside the grids were measured. Four different power grid EM characteristics are analyzed to explain the layout-dependent aging from 33 DUTs.