An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs

Ahstract- This paper presents a single event upset (SEU) cross section model reproducing the linear energy transfer (LET) and the voltage dependence in the bulk planar and FinFET static random-access memories (SRAMs). The model predicts both the LET and the applied voltage (V
DD
) dependence with physically explainable parameters.