Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages

Single-event (SE) cross-section trends are investigated at near-threshold-voltage (NTV) supply voltages for conventional D-flip-flop (D-FF) designs with different V
T
options and RHBD flip-flop (FF) designs at the 5-nm FinFET node. Results show very different responses for each design, yielding a wide range of choices for meeting design specifications.