Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB) study on ultra-thin HfO
2
-based ferroelectric under bipolar stress conditions. Here, field cycling is done on 7 nm Hf
0.5
Zr
0.5
O
2
(HZO) capacitors at different temperatures and bipolar stress fields. Despite involving polarization switching and associated large internal electric fields, bipolar cycling of ferroelectric HZO is shown to exhibit similar time-dependent dielectric breakdown acceleration trends to that of traditional dielectrics like SiO
2
. Notably, the temperature acceleration of time-dependent dielectric breakdown shows a linear dependence on the stress field similar to SiO
2
. Further, the field acceleration of time-dependent dielectric breakdown in ferroelectric HZO, while exhibiting functionally similar temperature dependence to that of SiO
2
, demonstrates considerably greater sensitivity to temperature.